Conferences

MRS Spring 2016, EP2—Silicon Carbide—Substrates, Epitaxy, Devices, Circuits and Graphene

E-MRS 2016, L Wide bandgap materials for electron devices

CIMTEC 2016, Materials Nanotechnologies for Implantable Neural Interfaces

C. L. Frewin, M. Jaroszeski, K. E. Muffly, M. Peters, E. Weeber and S. E. Saddow, "Atomic Force Microscopy Analysis of Central Nervous System Cell Morphology on Silicon Carbide and Diamond Substrates," Second International Meeting on AFM in Life Sciences and Medicine (AFM BioMed Conference), Monterey, CA, 15-18 Oct. 2008.

C. L. Frewin, C. Coletti, C. Riedl, U. Starke, S. E. Saddow, “A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations,” MoP-18 European Conf. on SiC and Related Materials (ECSCRM’08) Barcelona, Spain 7-11 Sep 2008.

C. Locke, R. Anzalone, A. Severino, C. Bongiorno, G. Litrico, F. La Via, and S. E. Saddow, “High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111),” Tu1-2 European Conf. on SiC and Related Materials (ECSCRM’08) Barcelona, Spain 7-11 Sep 2008.

Y. N. Picard, C. Locke, C. L. Frewin, M. E. Twigg, and S. E. Saddow, “Crystalline quality and surface morphology of 3C-SiC films on Si evaluated by electron channeling contrast imaging,” TuP-52 European Conf. on SiC and Related Materials (ECSCRM’08) Barcelona, Spain 7-11 Sep 2008.

C. Locke, C. Frewin, J. Wang, and S. E. Saddow, “Growth of Single Crystal 3C-SiC(111) on a Poly-Si Seed Layer,” WeP-5 European Conf. on SiC and Related Materials (ECSCRM’08) Barcelona, Spain 7-11 Sep 2008.

R. Anzalone, C. Locke, A. Severino, D. Rodilosso, C. Tringali, S. E. Saddow, F. La Via and G. D’Arrigo, “Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films,” WeP-15 European Conf. on SiC and Related Materials (ECSCRM’08) Barcelona, Spain 7-11 Sep 2008.

C. L. Frewin, H. Gomez, J. Sathyaharish, A. Kumar, M. Italia, C. Bongiorno and S. E. Saddow, “Nanocrystalline Diamond(NCD) Deposited on 3C-SiC Substrates,” WeP-31

C. Locke, G. Kravchenko, P. Waters, J. Deva Reddy, A. A. Volinsky, C. L. Frewin, and S. E. Saddow, “3C-SiC films on Si for MEMS applications: Mechanical Properties,” Late News European Conf. on SiC and Related Materials (ECSCRM’08) Barcelona, Spain 7-11 Sep 2008.

Alessia Pallaoro, Tullio Toccoli, Camilla Coletti, Nicola Coppedè, Lia Vanzetti, Roberto Canteri, Stephen E. Saddow and Salvatore Iannotta, “Study and Characterization of Different SiC Terminations and Their Interactions with Biomolecules,” XVIII Congresso Nazionale sulla Scienza e Tecnologia del Vuoto (18th National Congress on Vacuum Science and Technology), Florence, Italy 2-4 April, 2007.

S. Harvey, M. Reyes, Y. Shishkin, S.E. Saddow, “High growth rate of single crystal 3C-SiC on 2 inch Si (001) wafers,” Electronic Materials Conference (EMC), Penn. State U., June 2006.

Camilla Coletti, Martin Hetzel, Chariya Virojanadara, Ulrich Starke and Stephen E Saddow, “Surface Morphology and Structure of Hydrogen Etched 3C-SiC(001) on Si(001),” Materials Research Society Spring Meeting, San Francisco, CA April 2006.

Timothy J. Fawcett, Meralys Reyes-Natal, Anita Lloyd Spetz, Stephen E. Saddow, and John T. Wolan, “Thermal detection mechanism of SiC-based resistive gas sensors,” Materials Research Society Spring Meeting, San Francisco, CA April 2006.

S. E. Saddow, M. Reyes, M. Waits, S.P. Rao, Y. Shishkin, B. Geil and J.T. Wolan, “Growth of 3C-SiC on Si molds using halocarbons for MEMS applications,” (Invited), International Workshop on Processing of Semiconductor Devices, New Delhi, India, 13-17 Dec. 2005 (2005)

S. Rao, S.E. Saddow, R. Nipoti, and A. Agarwal,“ High-Temperature (>1700°C) Ion Implant Annealing of SiC using Silane Overpressure”, proceedings of the 5th European Conf. on Silicon Carbide and Related Materials, (ECSCRM'04), Bologna, Italy (2004).

ZQ Fang, DC Look, R. Chandrasekaran, S. Rao, and SE Saddow, “Electrical characteristics of 4H-SiC epitaxial layers grown by chemical vapor deposition on porous SiC substrates,” 2003 Electronic Materials Conference, Salt Lake City, UT, Jun. 25-27, 2003.

J. Kohlscheen, M. Beerbom, J.T. Wolan, S.E. Saddow, and R. Schlaf, "Characterization of the electronic structure of the Al/4H-SiC interface using photoelectron spectroscopy," European Conference on SiC and Related Materials ( ECSCRM'02 ), Linköping, Sweden, September 1 - 5, 2002.

M. Mynbaeva, N. Kuznetsov, A. Lavrent’ev, S. E. Saddow, J. T. Wolan,V. Ivantsov, A. Syrkin, A. Fomin, "Porous SiC: new applications through in- and out- dopant diffusion," European Conference on SiC and Related Materials ( ECSCRM'02 ), Linköping, Sweden, September 1 - 5, 2002.

S. Ostapenko, S. Lulu, Yu. M. Suleimanov, I. Tarasov, S. E. Saddow, V. D. Heydemann, M. D. Roth, O. Kordina, M. F. MacMillan, "Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating 6H-SiC," European Conference on SiC and Related Materials ( ECSCRM'02 ), Linköping, Sweden, September 1 - 5, 2002.

R. Chandrasekaran, M. Mynbaeva, S. Rao, T. S. Kuan, C. K. Inoki, G. Chung, C. Dalton, M. Jenkins, M. MacMillan, and S. E. Saddow, “A comparison of Schottky Diode performance on porous and conventional SiC substrates,” Electronic Materials Conference, UCSB, Santa Barbara, CA, June 2002.

Akshoy G., B.A. Grayson, S. E. Saddow, M. Mynbaeva, and J.T. Wolan, “Design, Fabrication and Characterization of Nanostructured Semiconductor SiC-based Catalytic Material System” Electronic Materials Conference, UCSB, Santa Barbara, CA, June 2002.

J. Kohlscheen, J.T. Wolan, S.E. Saddow, R. Schlaf, “Characterization of the electronic structure of SiC/Al interfaces using photoelectron spectroscopy,” 2002 MRS spring meeting , San Francisco, CA, April 1-5, 2002

M. C. Smith, J. B. Casady, P. B. Shah, B. M. Dufrene, B. J. Blalock, S. E. Saddow, “Design and Fabrication of Dual-Gate 4H-SiC JFET,” International Conf. On SiC & Related Materials ( ICSCRM'01 ) , WeP-58, Tsukuba, Japan, 28 Oct.-2 Nov. 2001.

Y. Koshka, W. A. Draper, J. Scofield, S. E. Saddow, “Hydrogen Incorporation in SiC Using Plasma-hydrogenation,” International Conf. On SiC & Related Materials ( ICSCRM'01 ) , ThP-44, Tsukuba, Japan, 28 Oct.-2 Nov. 2001.

J. Spitz, M. R. Melloch, J. A. Cooper, Jr., G. Melnychuk and S. E. Saddow, " 2.7 kV Epitaxial Lateral Power DMOSFETs in 4H-SiC ," Device Research Conference (DRC), Denver CO, June 19-21, 2000.

S. E. Saddow, G. Melnychuk, T. Isaacs-Smith, J. R. Williams, A. J. Hsieh and J. B. Casady, “High Temperature SiC Implant Activation in a Silane Ambient to Reduce Step Bunching,” 2000 Electronic Materials Conference (EMC’2000) , Denver CO, 21-23 June 2000.

M. C. D. Smith, J. B. Casady, M. S. Mazzola, S. E. Saddow, P.B. Shah, and M.C. Wood, “Processing Effects of Controlled N-type and P-type Doped SiC Epitaxy for Use in Dual-Gate JFETs,” 2000 Electronic Materials Conference (EMC’2000) , Denver CO, 21-23 June 2000.

S. E. Saddow, G. Carter, B. Geil, T. Zheleva, G. Melnychuck, M. E. Okhuysen, M. S. Mazzola, G. Katulka, R. D. Vispute, T. Venkatesan,, M. Derenge, M. H. Ervin, and K. Jones, "Lateral Epitaxial Overgrowth of 3C-SiC on Silicon Substrates," TMS/ONR Workshop on Lateral Epitaxial Overgrowth, Juneau Alaska, August 1999.

S. E. Saddow, M. S. Mazzola, M. Shamsuzzoha, S. V. Rendakova, V. A. Dmitriev, "TEM Investigation of Silicon Carbide Wafers With Reduced Micropipe Density," Materials Research Society, San Fransisco, CA, April 1999.

S. E. Saddow and M. S. Mazzola, " Field Plate Structure for High-Voltage SiC Power Devices ," International Semiconductor Device Research Symposium ( ISDRS'97 ), Charlottesville, VA, 11-13 Dec. 1997 (invited paper).

R. Soundararajan, J. Shaffer, M. S. Mazzola, N. H. Younan, and S. E. Saddow, " Improved Methods for Investigating Boron Related Defects in 6H-SiC Using Deep Level Transient Spectroscopy ," Sixteenth Biennial IEEE/Cornell University Conference on Advanced Concepts in High-Speed Semiconductor Devices and Circuits, Ithaca, NY, 4-6 August 1997, Cornell University. To view the poster presentation, click here .

M. S. Mazzola and S. E. Saddow, "High-Voltage SiC Power Device Field Terminations," Second International All Electric Combat Vehicle Conference, Dearborn, MI, 8-12 June 1997.

M. S. Mazzola, S. E. Saddow, D. J. Larkin, and P. G. Neudeck, "Characterization of B-Related Defects in 6H-SiC Epitaxial Layers," ARO Workshop on Wide Bandgap Semiconductors: Defects and Fundamental Parameters, 15-16 Jan. 1997, Research Triangle Park, NC.

S. E. Saddow, M. S. Mazzola, D. J. Larkin, and P. G. Neudeck, "SiC Epitaxial Layer Synthesis and Characterization," US Army Research Laboratory 1997 Sensors and Electron Devices Symposium, 14-15 Jan. 1997, College Park MD.

S. E. Saddow, M. S. Mazzola, D. J. Larkin, P. G. Neudeck, "Characterization of NASA-LERC B-Doped 6H-SIC Diodes," 3rd International High-Temperature Electronics Conference, Albuquerque, NM USA, 9-14 June 1996.

M. S. Mazzola, P. G. Neudeck, D. J. Larkin, C. W. Tipton, and S. E. Saddow, "Semi-Insulating SiC Epitaxial Layer Synthesis Using Site-Competition Epitaxy," Government Microelectronics Applications Conference (GOMAC’96), Orlando, FL, 18-21 March, 1996

Chi H. Lee, Eric. E. Funk, and Stephen E. Saddow, " Optical generation of time-coherent pulses for radar and spread-spectrum communications," PIERS '96 , July 8-12, 1996, Innsbruk, Austria. (invited paper).

N. A Riza and S. E. Saddow, "N-Bit Optically Controlled Microwave Signal Attenuator using the Photoconductive Effect," Optical Technology for Microwave Applications VII , SPIE Vol. 2560, 11-12 July, 1995.

E. E. Funk, S. E. Saddow, L. J. Jasper, Jr., C. H. Lee, "Time Coherent Ultra-Wideband Pulse Generation using Photoconductive Switching," IEEE LEOS 1995 Summer Topicals Meeting, Keystone, CO, 7-11 August 1995.

S. E. Saddow, "A Novel Optoelectronic Limiter for Electronic Circuit Protection," GOMAC'94, San Diego, CA, 9 Nov. 1994.

S. E. Saddow, "A Wideband Optoelectronic Limiter for Advanced Electronic Circuits Protection," 7th National Conference on High Power Microwave Technology, Monterey, CA 31 Oct. - 4 Nov. 1994.

A. Kim, S. E. Saddow, R. Youmans, L. J. Jasper, and M. Weiner, "Photoconductive Monolithic Wideband Transmitter," 19th Army Science Conference, Orlando, FL, June 21, 1994.

M. S. Mazzola and S. E. Saddow, "Semi-Insulating 6H-SiC Epitaxial Film Compensation Study," 21st IEEE International Conference on Plasma Science, Santa Fe, NM, June 1994.

S. E. Saddow and C. H. Lee, "Scattering Parameter Measurements on an Optoelectronic Attenuator," IEEE International Microwave Symposium (MTTS’94), San Diego, CA, May 23-27, 1994.

S. Yang, B. J. Thedrez, S. E. Saddow, C. Wood, R. Wilson, and C. H. Lee, "Generation and Measurement of High-Power Picosecond Pulses for Q-switched Two-section Broad-Area Quantum Well Lasers," Electronics & Packaging Technol. Conf., Washington, DC, May 1994.

S. E. Saddow and C. H. Lee, "A Remotely-Activated Optoelectronic Attenuator for Microwave Circuit Control," IEEE Optical Fiber Communications Conference - OFC’94, San Jose, CA, February 21-25, 1994.

S. E. Saddow and C. H. Lee, "Optical Control of Microwave Modules Using High-Speed Photoconductive Switches," The Fourth Annual ARPA Symposium on Photonics in Antenna Systems (PSAA-IV), Monterey, Ca, January 21, 1994.

S. E. Saddow, B. McLean, P. S. Cho, J. Goldhar, J. Palmour, and C. H. Lee, "Lateral and Vertical P-Type 6H-SiC Photoconductive Switch Response," International Conference on Silicon Carbide and Related Materials - ICSCRM-93, Washington, DC, Nov. 1-3, 1993.

S. E. Saddow, B. J. Thedrez, A. Balekdjian, and C. H. Lee, "An Optically-Controlled Microwave Attenuator," IEEE LEOS - Optical Microwave Interactions, Santa Barbara, CA, July 19-21, 1993.

A. Kim, S. E. Saddow, R. Youmans, L. J. Jasper, M. Weiner, and C. H. Lee, "Photoconductive Monolithic Wideband Transmitter Characterization," IEEE LEOS - Optical Microwave Interactions, Santa Barbara, CA, July 19-21, 1993.

S. E. Saddow, P. S. Cho, J. Goldhar, J. W. Palmour and C. H. Lee, "P-Type 6H-SiC Photoconductive Switches," 20th IEEE International Conference on Plasma Science, Vancouver, B.C. (Canada), 7-9 June 1993.

S. E. Saddow, P. S. Cho, J. Goldhar, and C. H. Lee, "High-Speed Photovoltaic Response of P-Type 6H-SiC," IEEE Sarnoff Symposium Proceedings, Princeton, NJ, Mar. 26, 1993.

V. van Lint, D. P. Snowden, and S. E. Saddow, "Direct Injection Measurements and Modeling of an FM-CW Proximity Fuze," HEART '93 conference and proceedings, Feb. 1-5 1993.

S. E. Saddow, B. J. Thedrez, S. L. Huang, T. J. Mermagen, and C. H. Lee, "An Investigation of the Temperature and Electric Field Dependence of a GaAs Microwave Photoconductive Switch," SPIE-OE/LASE 93: Optically Activated Switching, conference proceedings, 1873-31, Los Angeles, CA, Jan. 21, 1993.

S. E. Saddow, P. S. Cho, J. Goldhar, and C. H. Lee, "Photoconductive Measurements on P-Type 6H-SiC," SPIE-OE/LASE 93: Optically Activated Switching, conference proceedings, 1873-33, Los Angeles, CA, Jan. 21, 1993.

S. E. Saddow, V. van Lint, and D. P. Snowden, "Direct Injection Measurements on an FM-CW Fuze," Sixth National Conference on High Power Microwave Technology, Lackland A.F.B., San Antonio, TX Aug. 1992.

K. Boulais, J. Y. Choe, S. T Chung, A. Krall, K. Irwin, S. Saddow and M. J. Rhee, "The NSWC Microchannel Electron Source Program," Presented at BEAMS 92, Washington, D.C., May 1992.

K. Boulais, J. Y. Choe, S. E. Saddow, S. T. Chun, K. Irwin & M. J. Rhee, "Analysis of a High Current Micro-Channel Electron Source," presented at the Tri-Service/NASA Cold Cathode Workshop, Greenbelt, MD, Mar. 1992.

S. E. Saddow and S. Patel, "Evaluation of Gaseous Limiters at X-Band," Fifth National Conference on High Power Microwave Technology, U. S. Military Academy, West Point, NY June 1990.

M. Thek and S. E. Saddow, "Multipactor Limiter/Filter HPM Test Data," Fifth National Conference on High Power Microwave Technology, U. S. Military Academy, West Point, NY June 1990.