Hamid Charkhkar, Christopher Frewin, Maysam Nezafati, Gretchen L. Knaack, Nathalia Peixoto, Stephen E. Saddow, Joseph J. Pancrazio, "Use of cortical neuronal networks for in vitro material biocompatibility testing," Biosensors and Bioelectronics, Volume 53, 15 March 2014, Pages 316-323, ISSN 0956-5663, http://dx.doi.org/10.1016/j.bios.2013.10.002. Afroz, S., Thomas, S.W., Mumcu, G., Saddow, S.E., "Implantable SiC based RF antenna biosensor for continuous glucose monitoring," Sensors, 2013 IEEE , pp.1-4 (2013), doi: 10.1109/ICSENS.2013.6688379.
A. Oliveros, A. Guiseppi-Elie, and S. E. Saddow, "Silicon carbide: a versatile material for biosensor applications," Biomed Microdevices, Jan 15 2013.
Schoell, Sebastian; Sachsenhauser, Matthias; Oliveros, Alexandra; Howgate, John; Stutzmann, Martin; Brandt, Martin; Frewin, Christopher; Saddow, Stephen; Sharp, Ian, “Organic Functionalization of 3C-SiC Surfaces,” ACS Applied Materials & Interfaces, ACS Applied Materials & Interfaces 2013 5(4), 1393-1399
A. Oliveros, C.L. Frewin, S.J. Schoell, M. Hoeb, M. Stutzmann, I.D. Sharp and S.E. Saddow, “Assessment of cell proliferation on 6H–SiC biofunctionalized with self-assembled monolayers,” Journal of Materials Research, Volume 28, Issue 01 (2013) pp 78 - 86.
Francesco La Via, Giuseppe D’Arrigo, Andrea Severino, Nicolò Piluso, Marco Mauceri, Christopher Locke and Stephen E. Saddow, “Patterned substrate with inverted silicon pyramids for 3C–SiC epitaxial growth: A comparison with conventional (001) Si substrate, Journal of Materials Research, Volume 28, Issue 01 (2013) pp 94 – 103.
Ruggero Anzalone, Massimo Camarda, Christopher Locke, Josè Carballo, Nicolò Piluso, Antonino La Magna, Alex A. Volinsky, Stephen E. Saddow and Francesco La Via, “Stress nature investigation on heteroepitaxial 3C–SiC film on (100) Si substrates,” Journal of Materials Research, Volume 28, Issue 01 (2013) pp 129 – 135.
Andrea Severino, Christopher Locke, Francesco La Via, and Stephen E. Saddow, “(Invited) High Quality 3C-SiC for MOS Applications,” ECS Trans. 2011 41(8): 273-282;
R. Anzalone, G. D’Arrigo, M. Camarda, C. Locke, S. E. Saddow, and F. La Via, "Advanced Residual Stress Analysis and FEM Simulation on Heteroepitaxial 3C–SiC for MEMS Application,"Journal of Microelectromechanical Systems Vol. 20, no. 3 (2011).
C. L. Frewin, M. Jaroszeski, E. Weeber, K.E. Muffly, A. Kumar, M. Peters, A. Oliveros, and S.E. Saddow, “Atomic Force Microscopy Analysis of Central Nervous System Cell Morphology on Silicon Carbide and Diamond Substrates,” Journal of Molecular Recognition, Vol. 22, pp. 380 - 388, (2009).
C.L. Frewin, C. Locke, J. Wang, P. Spagnol and S.E. Saddow, “Growth of cubic silicon carbide on oxide using polysilicon as a seed layer for micro-electro-mechanical machine applications,” Journal of Crystal Growth, Vol. 311, Issue 17, pp 4179-4182 (2009).
C. Coletti, C.L. Frewin, A.M. Hoff, S.E. Saddow, “Electronic Passivation of 3C-SiC(001) via hydrogen-treatment,” Electrochemical and Solid-State Letters 11 No. 10 pp. H285-287 (2008).
C. Coletti, S.E. Saddow, C.L. Frewin, M. Hetzel, C. Virojanadara, and U. Starke, "Surface studies of hydrogen etched 3C-SiC(001) on Si (001), ” APL 91 (1) (2007).
C. M. Tanner, Ya-C. Perng, C. Frewin, S. E. Saddow and J. P. Chang, “Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC,” APL, 91 (19) (2007).
T. J. Fawcett, J. T. Wolan, A. Lloyd-Spetz, M. Reyes and S. E. Saddow, “Thermal detection mechanism of SiC based hydrogen resistive gas sensors,” APL 89 (1) pp. (2006).
Y Shishkin, E Oborina, A Maltsev, S E Saddow and A M. Hoff, “Oxide of non-basal quasi-polar 6H-SiC surfaces,” J. Phys. D: Appl. Phys. 39 pp. 1-4 (2006).
U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty, and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC(-1102) and 4H-SiC(-110 -2),” APL 88 (3) pp. 031915-1 (2006).
S. Rao, F. Bergamini, R. Nipoti and S.E. Saddow, “Silane Overpressure Post-Implant Annealing of Al dopants in SiC: Cold Wall CVD apparatus,” Appl. Surf. Sci, 252 pp. 3837–3842 (2006).
R. L. Myers, Y. Shishkin, O. Kordina, and S.E. Saddow, ‘High growth rates (>30µm/h) of 4H-SiC epitaxial layers using a horizontal hot-wall CVD reactor,’ J. of Crystal Growth vol. 285/4, pp. 483-486 (2005).
T. J. Fawcett and J. T. Wolan, R. L. Myers, J. Walker, and S. E. Saddow, “Wide-range (0.33 – 100%) 3C-SiC resistive hydrogen gas sensor development,” APL 85 (3) pp. 416–418 (2004).
Gazi Demir, Timothy E. Renfro, R. Glosser and S. E. Saddow, “Optical characterization of n- and p-doped 4H-SiC by electroreflectance spectroscopy,” APL 84 (16) p. 1-3 (2004).
Z.-Q. Fang, D.C. Look, R. Chandrasekaran, S. Rao, and S.E. Saddow, Electrical Characteristics of a 6H-SiC Epitaxial Layer Grown by Chemical Vapor Deposition on Porous SiC Substrate,” J. of Electronic Materials, Vol. 33, No. 5 (2004).
P. A. Ivanov, M. Mynbaeva and S. E. Saddow, “Effective carrier density in porous silicon carbide,” Semiconductor Science and Technology, volume 19, issue 3, pages 319 - 322 (2003).
J. Kohlscheen, Y. N. Emirov, M. M. Beerbom, J. T. Wolan, S. E. Saddow, G. Chung, M. F. MacMillan, and R. Schlaf, “Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy,” J. Appl. Phys. 94 6, (2003).
S. Dogan, A. Teke, D. Huang, H. Morkoc, C. B. Roberts, J. Parish, B. Ganguly, M. Smith, R. L. Myers and S. E. Saddow, “4H-SiC photoconductive switching devices for use in high-power applications,” APL, 82 (18) p. 3107-3109 (2003).
S. Ostapenko, Yu. M. Suleimanov, I. Tarasov, S. Lulu and S. E. Saddow, “Thermally stimulated luminescence in full-size 4H-SiC wafers,” J. Phys.: Condens. Matter 14 13381-13386 (2002).
J. T. Wolan, B. A. Grayson, J. Kohlscheen, Y. Emirov, R. Schlaf, and S. E. Saddow, “Effect of hydrogen etching and subsequent sacrificial thermal oxidation on morphology and composition of 4H-SiC surfaces,” J. Electronic Materials, 31 (5) (2002).
M. Mynbaeva, N. Bazhenov, K. Mynbaev, V. Evstropov, S.E. Saddow, Y. Koshka, and Y. Melnik, “Photoconductivity in Porous GaN Layers,” phys. stat. sol.(b) 228 (2) p. 589 –592 (2001).
S. E. Saddow, M. Mynbaeva, M. C. D. Smith, A. N. Smirnov, V. Dimitriev, “Growth of SiC Epitaxial Layers on Porous Surfaces of Varying Porosity,” Applied Surface Science 184 p. 72-78 (2001).
N. I. Kuznetsov, M. Mynbaeva, G. Melnychuk, V. A. Dmitriev, and S. E. Saddow, “Electrical characterization of schottky diodes fabricated on SiC epitaxial layers grown on porous SiC substrates,” Applied Surface Science 184 p. 483-486 (2001).
J. T. Wolan, B.A. Grayson, G. Akshoy, S. E. Saddow, “Characterization of single-crystal SiC polytypes using X-ray and Auger photoelectron spectroscopy, Applied Surface Science 184 p.167-172 (2001).
K. J. Roe, G. Katulka, J. Kolodzey, S. E. Saddow, and D. Jacobson, “Silicon Carbide and Silicon Carbide:Germanium Heterostructure Bipolar Transistors,” APL 78 (13) 2073 (2001).
I. Sankin, J.B. Casady, J. B. Dufrene, W. A. Draper, J. Kretchmer, J. Vandersand, M. S. Mazzola, V. Kumar, and S. E. Saddow, “On The Development of 6H-SiC LDMOS Transistors Using Silane-ambient Implant Anneal,” Solid State Electronics 45 p. 1653-1657 (2001).
S. E. Saddow, T. E. Schattner, J. Brown, L. Grazulis, K. Mahalingham, G. Landis, R. Bertke and W. C. Mitchel, “Effects of Substrate Surface Preparation on Chemical Vapor Deposition Growth of 4H-SiC Epitaxial Layers,” J. of Electronic Materials, 30 (2) 228-234 (2001).
M. Mynbaeva, S. E. Saddow and G. Melnychuk, I. Nikitina, M. Scheglov, A. Sitnikova, N. Kuznetsov, A. Zubrilov, and K. Mynbaev, N. Seredova, V. Dmitriev, “Chemical vapor deposition of 4H-SiC epitaxial layers on porous SiC substrates,” Applied Physics Letters, 78 117 pp. 117-119 (2001).
S. E. Saddow, V. Kumar, T. Isaacs-Smith, J. Williams, A. J. Hsieh, Graves and J. T. Wolan, “Implant Anneal Process for Activating Ion Implanted Regions in SiC Epitaxial Layers,” Trans. on Electrical & Electronic Materials (KIEEME) invited paper Vol. 1 , No. 4 (2000).
S. E. Saddow, T. E. Schattner, M. Shamsuzzoha, S. V. Rendakova, V. A. Dmitriev, “TEM Investigation of Silicon Carbide Wafers With Reduced Micropipe Density," J. of Electronic Materials, 29 (3) (2000), 364-367..
S. E. Saddow, M. S. Mazzola, S. V. Rendakova, and V. A. Dmitriev, “Silicon Carbide CVD Homoepitaxy on Wafers With Reduced Micropipe Density,” Material Science and Engineering B, B61-62 , (1999) 158-160.
M. S. Mazzola, S. E. Saddow, and A. Schöner, “Close Compensation of 6H and 4H Silicon Carbide by Silicon-to-Carbon Ratio Control, ” Material Science and Engineering B, B61-62, p. 155-157 (1999) .
M. S. Mazzola, N. H. Younan, R. Soundararajan, and S. E. Saddow, “Application of the SVD-Prony Method for Analyzing DLTS Capacitance Transients,” Rev. of Scientific Instrum., 69 Number 6 (1998).
N. A Riza and S. E. Saddow, "Optically Controlled Photoconductive N-Bit Switched Microwave Signal Attenuator," IEEE Microwave & Guided Wave Lett., 5 (12) (1995).
S. E. Saddow and C. H. Lee "Optical Control of Microwave Integrated Circuits Using High-Speed GaAs And Si Photoconductive Switches," IEEE Trans. MTT ., 43 (9) (1995).
S. E. Saddow, M. Lang, T. Dalibor, G. Pensl, and P. G. Neudeck, "Thermal Capacitance Spectroscopy of Epitaxial 3C- and 6H-SiC pn Junction Diodes Grown Side-by-Side on a 6H-SiC Substrate ," APL 66 (26) (1995).
P. S. Cho, S. E. Saddow, J. Goldhar, P. G. Neudeck, and C H. Lee, "Photoconductive and Photovoltaic Response of High-Dark Resistivity 6H-SiC Devices," J. Appl. Phys., 77 (4) (1995).
S. E. Saddow, C. W. Tipton, and M. S. Mazzola " Hole capture by D-center defects in 6H-silicon carbide ," J. Appl. Phys. , 77 (1) (1995).
S. E. Saddow, P. S. Cho, J. Goldhar, P. G. Neudeck, and C. H. Lee, "Subnanosecond Photovoltaic Response in 6H-SiC," APL 65 (26) (1994).
V. van Lint, D. P. Snowden, and S. E. Saddow, "Direct Injection Measurements and Modeling of an FM-CW Proximity Fuze," IEEE J. Rad. Effects, 12-1A, (1994).
M. S. Mazzola, S. E. Saddow, P. Neudeck, et al, " Observation of the D-Center in CVD-Grown p-n Diodes ," APL 64 (20) (1994).
S. Yang, B. J. Thedrez, S. E. Saddow, Y. Q. Liu and C. H. Lee, "Cross-Correlation Measurement of the Turn-On Delay and Pulsewidth of a Q-Switched Two-Section Semiconductor Laser," IEEE Photonics Tech. Lett., 5 (12) p. 1365-1368 (1993) .
S. E. Saddow, B. J. Thedrez, and C. H. Lee, "An Optoelectronic Attenuator for the Control of Microwave Circuits," IEEE Microwave Guided Wave. Lett., 3 (10) p. 361-362 (1993).
B. J. Thedrez, S. E. Saddow, Y. Q. Liu, and C. H. Lee, " Experimental and Theoretical Investigation of Large Output Broad Area AlGaAs Semiconductor Laser Diodes ," IEEE Photonics Tech. Lett. , 5 (1), p. 19-22,(1993).