Refereed Conference Publications

Maysam Nezafati, Stephen E. Saddow and Christopher L. Frewin (2014). Investigating the surface changes of silicon in vitro within physiological environments for neurological application . MRS Online Proceedings, vol. 1621, mrsf13-1621-j01-03. doi:10.1557/opl.2014.303.

A. Oliveros, C. Coletti, C.L. Frewin, C, Locke, U. Starke and S.E. Saddow, “Cellular Interactions on Epitaxial Graphene on SiC (0001) Substrates,” Materials Science Forum 679-680pp 824-830 (2011).

S.E. Saddow, A. Oliveros, C. Coletti, C.L. Frewin, N. Schettini, A. Oliveros and M. Jarosezeski, “Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications,” Materials Science Forum 679-680pp 824-830 (2011).

Anzalone R., Camarda M., D’Arrigo G., Locke C., Canino A., Piulso N., Severino A., La Magna A., Saddow S.E., and La Via F., “Advanced stress analysis by micro-structures realization on high-quallity hetero-epitaxial 3C-SiC for MEMS application, Materials Science Forum 679-680 pp 133-136 (2011).

S.E. Saddow, C. Coletti, C.L. Frewin, N. Schettini, A. Oliveros and M. Jarosezeski, “Single-crystal Silicon Carbide: A Biocompatible and Hemocompatible Semiconductor for Advanced Biomedical Applications,” Mater. Res. Soc. Symp. Proc. Vol. 1246 pp. 193-198 (2010).

H. Gomex, C.L. Frewin, A. Kumar, S.E. Saddow, C. Locke, “Study of the Adhesion and Biocompatibility of Nanocrystalline Diamond (NCD) Films on 3C-SiC Substrates,” Mater. Res. Soc. Symp. Proc. Vol. 1203 (2010).

R. Anzalone, C. Locke,J. Carballo, N. Piluso, A. Severino, G. D’Arrigo, A. A. Volinsky, F. La Via and S.E. Saddow, “ Growth rate effect on 3C-SiC film residual stress on (100) Si substrates,” Materials Science Forum 645-648 pp 143-146 (2010).

R. Anzalone, M. Camarda, D. Alquier, M. Italia, A. Severino, N. Piluso, A. La Magna, G. Foti, C. Locke, S.E. Saddow, A. Roncaglia, F. Mancarella, A. Poggi, G. D’Arrigo, and F. La Via, “ Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilever,” Materials Science Forum 645-648pp 865-868 (2010).

C. Locke, G. Kravchenko, P. Waters, J.D.Reddy, K. Du, A.A. Volinsky, C.L. Frewin and S.E. Saddow, “3C-SiC Films on Si for MEMS Applications: Mechanical Properties,” Materials Science Forum 615-617 pp 633-636 (2009).

C.L. Frewin, C. Coletti, C. Riedl, U. Starke and S.E. Saddow, “A Comprehensive Study of Hydrogen Etching on the Major SiC Polytypes and Crystal Orientations,” Materials Science Forum 615-617 pp 589-592 (2009).

C. Locke, C.L. Frewin, J. Wang and S.E. Saddow, “Growth of Single Crystal 3C-SiC(111) on a poly-Si Seed Layer,” Materials Science Forum 615-617 pp 157-160 (2009).

C. Locke, R. Anzalone, A. Severino, C. Bongiorno, G. Litrico, F. La Via and S.E. Saddow, “High Quality Single Crystal 3C-SiC(111) Films Grown on Si(111),” Materials Science Forum 615-617 pp 145-148 (2009).

Y. Picard, C. Locke, C.L. Frewin, M.E. Twigg and S.E. Saddow, “Crystalline Quality and Surface Morphology of 3C-SiC(111) on Si Evaluated by Electron Channeling Contrast Imaging,” Materials Science Forum 615-617 pp 435-438 (2009).

A. Severino, C. Frewin, R. Anzalone, C. Bongiorno, P. Fiorenza, G. D’Arrigo, F. Giannazzo, G. Foti, F. La Via and S. E. Saddow, “Growth of 3C-SiC on Si: Influence of Process Pressure,” Materials Science Forum Vols. 600-603 (2009) pp 211-214.

R. Anzalone A. Severino, C. Locke, S. E. Saddow, F. La Via and G. D’Arrigo, “3C-SiC hetero-epitaxial films for sensor fabrication,” Advances in Science and Technology Vol. 54 (2008) pp 411-415 © (2008) Trans Tech Publications, Switzerland

Yoosuf N. Picard, Joshua D. Caldwell, Karl D. Hobart, Mark E. Twigg, Christopher Locke, Christopher L. Frewin, Stephen E. Saddow, “Nondestructive defect measurement and surface analysis of 3C-SiC grown on Si (001) by electron channeling contrast imaging,” Mat. Res. Soc. Symp. Proc. Vol. 1069 (2008).

A. A. Volinsky, G. Kravchenko, P. Waters, J. Deva Reddy, C. Locke, C. Frewin, S.E. Saddow, “Residual Stress in CVD-grown 3C-SiC Films on Si Substrates,” Mat. Res. Soc. Symp. Proc. Vol. 1069(2008).

J. Deva Reddy, A.A . Volinsky, C. Frewin, C. Locke, S.E. Saddow, “Mechanical Properties of Single and Polycrystalline SiC Thin Films,” Mat. Res. Soc. Symp. Proc. Vol. 1049, (2008).

C. Coletti, M. J. Jaroszeski, A. Pallaoro, A.M. Hoff, S. Iannotta and S.E. Saddow, “Biocompatibility and wettability of crystalline SiC and Si surfaces,” IEEE EMBC Proceedings, pp. 5849-5852, (2007).

Y. Shishkin, R. L. Myers, S. E. Saddow, A. Galyukov, A. Vorob'ev, D. Brovin, D. Bazarevskiy, R. Talalaev and Yu. Makarov, “Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and Modeling,” Materials Science Forum Vols. 556-557 (2007) pp 61-64.

Y. Shishkin, S. P. Rao, O. Kordina, I. Agafonov, A. Maltsev, J. Hassan, A. Henry, C. Moisson and S. E. Saddow, “CVD of 6H-SiC on Non-Basal Quasi Polar Faces,” Materials Science Forum Vols. 556-557 (2007) pp 73-76.

M. Reyes, Y. Shishkin, S. Harvey and S. E. Saddow, “Increased Growth Rates of 3C-SiC on Si(100) Substrates via HCl Growth Additive,” Materials Science Forum Vols. 556-557 (2007) pp 191-194.

M. J. Clouter, Y. Ke, R. P. Devaty, W. J. Choyke, Y. Shishkin and S. E. Saddow, “Raman Spectra of a 4H-SiC Epitaxial Layer on Porous and Non-Porous 4H-SiC Substrates,” Materials Science Forum Vols. 556-557 (2007) pp 415-418.

C. Coletti, M. Jaroszeski, A. M. Hoff and S.E. Saddow, “Culture of mammalian cells on single crystal SiC substrates,” Mater. Res. Soc. Symp. Proc. Vol. 950, (2006).

M. Reyes, Y. Shishkin, S. Harvey, S.E. Saddow, “Development of a high-growth rate 3C-SiC on Si CVD process (invited),” Spring Materials Research Society Meeting Proceedings, Vol. 911, pp. 79 (2006).

C. Coletti, M. Hetzel, C. Virojanadara, U. Starke and S.E. Saddow, “Surface Morphology and Structure of Hydrogen Etched 3C-SiC(001) on Si(001),” Spring Materials Research Society Meeting Proceedings, Vol. 911, pp. 131 (2006).

Y. Chen, G. Dhanaraj, M. Dudley, H. Zuang, R. Ma, Y. Shishkin and S.E. Saddow, “Multiplication of Basal Plane Dislocations via Interaction with C-Axis Threading Dislocations in 4H-SiC,” Spring Materials Research Society Meeting Proceedings, Vol. 911, pp. 151 (2006).

S. Soubatch, W. Y. Lee, M. Hetzel, C. Virojanadara, C. Coletti, S.E. Saddow and U. Starke, “Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations,” Spring Materials Research Society Meeting Proceedings, Vol. 911, pp. 271 (2006).

T. J. Fawcett, M. Reyes, A. L. Spetz, S.E. Saddow and J. T. Wolan, “Thermal Detection mechanism of SiC-Based Resistive Gas Sensors,” Spring Materials Research Society Meeting Proceedings, Vol. 911, pp. 289 (2006).

U. Starke, W.Y. Lee, C. Coletti, S.E. Saddow, R.P. Devaty and W.J. Choyke, “SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2),” Materials Science Forum Vols. 527-529, pp.677 (2006).

R.L. Myers, Y. Shishkin, O. Kordina, I. Haselbarth and S.E. Saddow, “High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD,” Materials Science Forum Vols. 527-529, pp. 187 (2006).

Y. Shishkin, Y. Ke, F. Yan, R.P. Devaty, W.J. Choyke and S.E. Saddow, “CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates,” Materials Science Forum Vols. 527-529, pp. 255 (2006).

M. Reyes, M. Waits, S. Harvey, Y. Shishkin, B. Geil, J.T. Wolan and S.E. Saddow, “Growth of 3C-SiC on Si Molds for MEMS Applications,” Materials Science Forum Vols. 527-529, pp. 307 (2006).

F. Bergamini, S.P. Rao, A. Poggi, F. Tamarri, S.E. Saddow and R. Nipoti, “Ion Implanted p + /n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor,” Materials Science Forum Vols. 527-529, pp. 819 (2006)

S. Rao, F. Bergamini, R. Nipoti, A.M. Hoff, E. Oborina and S.E. Saddow, “Post-Implantation Annealing in a Silane Ambient using Hot-Wall CVD,” Materials Science Forum Vols. 527-529, pp.839 (2006).

Rachael L. Myers, Olle Kordina, Shailaja Rao, Richard Everly, and Stephen E. Saddow, “Increased growth rate in a SiC CVD reactor using HCl as an additive,” Materials Science Forum Vols. 483-485 (2005) pp. 73-76.

Hugues Mank, Catherine Moisson, Daniel Turover, Mark Twigg and Stephen E. Saddow, “Regrowth of 3C-SiC on CMP treated 3C-SiC/Si Epitaxial Layers,” Materials Science Forum Vols. 483-485 (2005) pp. 197-200.

T. Acartürk, K. Semmelroth, G. Pensl, S. E. Saddow and U. Starke, “Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS),” Materials Science Forum Vols. 483-485 (2005) pp. 453-456.

Fabio Bergamini, Shailaja P. Rao, Stephen E. Saddow and Roberta Nipoti, “J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600°C,” Materials Science Forum Vols. 483-485 (2005) pp. 629-632.

S. Soubatch, S. E. Saddow, S.P. Rao, W.Y. Lee, M. Konuma and U. Starke, “Structure and Morphology of 4H-SiC Wafer Surfaces after H2-Etching,” Materials Science Forum Vols. 483-485 (2005) pp. 761-764.

Stephen E. Saddow, Rachael L. Myers and Shailaja P. Rao, “Use of a CVD Reactor for Advanced SiC Processing (invited),” Proc. of International Symposium on Advanced Materials and Processing ISAMAP2K4, Kharagpur, India (2004) pp. 1002-1009.

Y. Koshka, Y. Song, J. Walker, S.E. Saddow and M. Mynbaeva, “Spin-on Doping of Porous SiC with Er,” Materials Science Forum Vols. 457-460 (2005) pp. 763-766.

A.M. Hoff, E. Oborina, S.E. Saddow, and A. Savtchouk, “Thermal Oxidation of 4H-SiC Using the Afterglow Method,” Materials Science Forum Vols. 457-460 (2005) pp. 1349-1352.

T. Fawcett, J.T. Wolan, R.L. Myers, J.Walker, and S.E. Saddow, “Hydrogen gas sensors using 3C-SiC/Si epitaxial layers,” Materials Science Forum Vols. 457-460 (2005) pp. 14991-1502.

R.L. Myers, S.E. Saddow, S. Rao, K.D. Hobart, M. Fatemi, and F.J. Kub, “Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates,” Materials Science Forum Vols. 457-460 (2004) pp. 1511-1514.

S. Rao, S.E. Saddow, F. Bergamini, R. Nipoti, Y. Emirov, and Anant Agarwal, “A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient” Mat. Res. Soc. Symp. Proc. Vol. 815, pp. 229-233 (2004).

R.L. Myers, K.D. Hobart, Mark Twigg, S. Rao, M. Fatemi, F.J. Kub, and S.E. Saddow, “Structural characterization of 3C-SiC films grown on Si layers wafer bonded to polycrystalline SiC substrates” Mat. Res. Soc. Symp. Proc. Vol. 815, pp. 145-148 (2004).

H.J. von Bardeleben, J.L. Cantin, M. Mynbaeva, S.E. Saddow, Y. Shishkin, R.P. Devaty, W.J. Choyke, “EPR Studies of SiC/SiO2Interfaces in n-type 4H- and 6H Oxidized Porous SiC (invited),” Electrochemical Society Proceedings Volume 2003-02, pp. 39-51 (2003).

R.L. Myers, S.E. Saddow, S. Rao, K.D. Hobart, M. Fatemi, and F.J. Kub, "Development of 3C-SiC SOI structures using Si on polycrystalline SiC wafer bonded substrates," Mater. Science Forum Vols. 457-460 pp. 1511-1514, Trans Tech Publications (2004).

T. Fawcett, J.T. Wolan, R.L. Myers, J. Walker, and S.E. Saddow, "Hydrogen gas sensors using 3C-SiC/Si epitaxial layers," Mater. Science Forum Vols. 457-460 pp. 1499-1502, Trans Tech Publications (2004).

A.M. Hoff, E. Oborina, S.E. Saddow, and A. Savtchouk, "Thermal Oxidation of 4H-SiC using the Afterglow Method," Mater. Science Forum Vols. 457-460 pp. 1349-1352, Trans Tech Publications (2004).

Y. Koshka, Y. Song, J. Walker, S.E. Saddow and M. Mynbaeva, "Spin-on Doping of Porous SiC with Er," Mater. Science Forum Vols. 457-460 pp. 763-766, Trans Tech Publications (2004).

H.J. von Bardeleben, J.L. Cantin, M. Mynbaeva, S.E. Saddow, Y. Shishkin, R.P. Devaty, W.J. Choyke, “EPR Studies of SiC/SiO2 Interfaces in n-type 4H- and 6H Oxidized Porous SiC (invited),” Electrochemical Society Proceedings Volume 2003-02, pp. 39-51 (2003).

H.J. von Bardeleben, J.L. Cantin, M. Mynbaeva and S.E. Saddow, “EPR Studies of Interface Defects in n-type 6H-SiC/SiO2 Using Porous SiC,” Mater. Science Forum Vols. 433-436 pp. 495-498, Trans Tech Publications (2003).

C. Calmes, V. LeThanh, D. Bouchier, S. E. Saddow, V. Yam, D. Débarre, R. Laval and C. Clerc, “Self-assembled Ge quantum dots on SiC substrates grown by ultra High Vacuum CVD,” Mat. Res. Soc. Symp. Proc. Vol. 742, p. 143, (2003).

A. M. Hoff, A. Tribewala, and S. E. Saddow, "Afterglow oxidation of silicon carbide," Mat. Res. Soc. Symp. Proc. Vol. 742, p. 227, (2003).

Y.M. Suleimanov, S. Lulu, I. Tarasov, S. Ostapenko, S. E. Saddow, T.V. Torchinska, V.D. Heydemann, M.D. Roth, O. Kordina, and M.F. MacMillan, "Spatially resolved photoluminescence and thermally stimulated luminescence in semi-insulating SiC wafers," Mat. Res. Soc. Symp. Proc. Vol. 742, p. 103, (2003).

B. Raghothamachar, J. Bai, W.V. Vetter, P. Gouma, M. Dudley, M. Mynbaeva, M.T. Smith and S. E. Saddow, "Characterization of porous SiC substrates and the epilayer grown them," Mat. Res. Soc. Symp. Proc. Vol. 742, p. 109, (2003).

S.E. Saddow, Troy Elkington, and M.C.D. Smith, “ Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed Crystals,” Mater. Science Forum Vols. 389-393 pp. 399-402, Trans Tech Publications (2002).

Y. Koshka, W. A. Draper, R. Y. Lakshman, J. Scofield, and S. E. Saddow, “Hydrogen Incorporation into SiC Using Plasma-Hydrogenation, ” Mater. Science Forum Vols. 389-393 pp. 569-572, Trans Tech Publications (2002).

S. Ostapenko, M.C.D. Smith, I. Tarasov, J. T. Wolan, M. Mynbaeva, J. Goings, J.C.P. McKeon, and S. E. Saddow, “Scanning Acoustic Microscopy in Porous SiC,” Mater. Science Forum Vols. 389-393 pp. 687-690, Trans Tech Publications (2002).

S.E. Saddow, M. Mynbaeva, W.J. Choyke, R.P. Devaty, Song Bai, G. Melnychuk, Y. Koshka, V. Dmitriev, and C.E.C. Wood, “SiC defect density reduction by epitaxy on porous surfaces,” Mater. Science Forum Vols. 353-356 pp. 115-118, Trans Tech Publications (2001).

D.C. Sheridan, J.N. Merrett, J.D. Cressler, S.E. Saddow, J.R. Williams, C.E. Ellis and G. Nniu, “Design and characterization of 2.5kV 4H-SiC JBS rectifiers with self-aligned guard ring termination,” Mater. Science Forum Vols. 353-356 pp. 687-690, Trans Tech Publications (2001).

S.E. Saddow, G. Melnychuk, M. Mynbaeva, I. Nikitina, W.M. Vetter, L. Jin, M. Dudley, M. Shamsuzzoha, V. Dmitriev, and C.E.C. Wood, “Structural characterization of SiC epitaxial layers grown on porous SiC substrates,” Mat. Res. Symp. Proc. Vol. 640, p. H2.7.1, (2001).

B.A. Grayson, J.T. Wolan, M. Graves, M. Bledsoe, K. Kirchner, and S. E. Saddow, “comparison of 3C-SiC films grown by CVD on Si(111) and Si(211) substrates,” Mat. Res. Symp. Proc. Vol. 640 , p. H5.43.1, (2001).

G. Melnychuk, M. Mynbaeva, S. Rendakova, V. Dmitriev and S. E. Saddow, “SiC Epitaxial Growth On Porous SiC Substrates,” Mat. Res. Symp. Proc. Vol. 622, p. T4.2.1, (2000).

G. E. Carter, G. Melnychuck, S. E. Saddow, T. Zheleva, B. Geil, and K. Jones, “ Pendeo Epitaxy Of 3C-SiC on Si Substrates ,” Mat. Res. Symp. Proc. Vol. 622, p. T6.3.1, (2000).

J. T. Wolan, J. T. Christiansen, Y. Koshka, S. E. Saddow, Yu. Melnik, and V. Dmitriev, “Characterization of Thin GaN Layers Deposited by Hydride Vapour Phase Epitaxy (HVPE) on 6H-SiC Substrates,” Mat. Res. Symp. Proc. Vol. 622, p. H5.7.1, (2000).

S. E. Saddow, M. Capano, J. A. Cooper, M. S. Mazzola, J. Williams and J. B. Casady, “High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching,” Materials Science Forum Vols. 338-342 (2000) pp. 901-904.

G. Carter, J. B. Casady, M. Okhuysen, J. D. Scofield, and S. E. Saddow, “Preliminary investigation of 3C-SiC on silicon for biomedical applications,” Materials Science Forum Vols. 338-342 (2000) pp. 1149-1152.

S. E. Saddow, G. Carter, G. Melnychuck, M. E. Okhuysen, M. S. Mazzola, Haibin Su, Li Jin, M. Dudley, B. Geil, T. Zheleva, and K. Jones, “Lateral Epitaxial Overgrowth of 3C-SiC on Silicon Substrates,” Materials Science Forum Vols. 338-342 (2000) pp. 245-248, Trans Tech Publications, Switzerland.

M. Shamsuzzoha, S. E. Saddow, T. E. Schattner, M. Dudley, S. V. Rendakova, and V. A. Dmitriev, “Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amounts of Micropipe Density,” Materials Science Forum Vols. 338-342 (2000) pp. 453-456.

T. E. Schattner, J. B. Casady, M. S. Mazzola, V. A. Dimitriev, S. V. Rentakova, and S. E. Saddow, "4H-SiC Device Scaling Development on Repaired Micropipe Substrates" Materials Science Forum Vols. 338-342 (2000) pp. 1203-1206.

A. V. Los, M. S. Mazzola, and S. E. Saddow, “Study of Carrier Freeze-Out in SiC by Admittance Spectroscopy and Frequency-Dependent C-V Measurements,” Materials Science Forum Vols. 338-342 (2000) pp. 338-342.

S.E. Saddow, M.E. Okhuysen, M.S. Mazzola, M. Dudley, X.R. Huang, W. Huang and M. Shamsuzzoha, “Characterization of Single-Crystal 3C-SiC on Si Epitaxial Layers", Mat. Res. Soc. Symp. Proc. Vol 535, Boston, MA, (1999), pp 107-112.

M. S. Mazzola, S. E. Saddow, Adolf Schoener, " Boron Compensation of 6H Silicon Carbide ," Materials Science Forum Vols. 264-268 (1998) pp. 119-122.

S. E. Saddow, M. S. Mazzola, C. W. Tipton, M. Lang, and P. G. Neudeck, " Capacitance Spectroscopy on 6H-SiC pn Junctions Grown by Site-Competition Epitaxy ," Inst. Phys. Conf. Ser. No. 142: Chapter 2, IOP (1996) pp. 289-292.

M. S. Mazzola, S. E. Saddow, and C. W. Tipton, " Two-Level Model of D-Center Defects in 6H-SiC ," Inst. Phys. Conf. Ser. No. 142: Chapter 2, IOP (1996) pp. 473-476.

E. E. Funk, S. E. Saddow, L. J. Jasper, Jr., C. H. Lee, "Coherent Power Combining of Ultra-Wideband Pulsed Radiation in Free Space," IEEE International Microwave Conference (IMS’95), Orlando, FL, TH3D-5, 15-19 May 1995.

S. E. Saddow, P. S. Cho, J. Goldhar, F. Barry McLean, J. W. Palmour and C. H. Lee, "Lateral and Vertical P-Type 6H-SiC Photoconductive Switch Response," Inst. Phys. Conf. Ser. No. 137:Chapter 6, Springer-Verlag, 1994 pp. 573-576.

S. D. Patel, L. Dubrowsky, S. E. Saddow, R. Kaul, and R. V. Garver, "Microstrip Plasma Limiter," IEEE International Microwave Symposium (MTTS’89), Long Beach, CA, June 13-15, 1989.