Ph.D. in Electrophysics (EE) University of Maryland at College Park , Dec. 1993. Optical Control of Microwave Integrated Circuits using High-Speed Photoconductive Switches. Advisor: Prof. Chi H. Lee, Professor of Elec. Engr., Dept. of ECE University of Maryland.
M.S.E.E. Polytechnic University , Brooklyn, NY Jan 1988.
B.S.E.E. Western New England College , Springfield MA 1983.
Dr. Saddow's research interests are to develop wide-bandgap semiconductor materials for high-field and high-power device applications. His most recent work has focused on the use of SiC for Bio, Nano and MEMS applications. He is a visiting professor in Sicily where he conducts analysis and growth studies of 3C-SiC on Si substrates at the Istituto per la Microelettronica e Microsistemi - Consiglio nazionale delle ricerche (IMM-CNR), Catania, Sicily (IT). His ultimate research objective is to develop smart sensors for harsh environments and biomedical applications based on wide band gap semiconductor materials. He is a senior member of the IEEE and has over 100 publications on SiC materials and devices, with nearly half in archived journals. For more information on Dr. Saddow's research activities visit his homepage at http://www.eng.usf.edu/~saddow.
Dr. Saddow is developing wide-bandgap semiconductor materials for biomedical applications. He has been jointly appointed to the college of medicine to facilitate this research where he worked with Dr. C Frewin in the Murine Neurobehavior Laboratory, to develop 3C-SiC based neuronal activation devices for insertion into the central nervous system. The application is to repair damaged neuronal connections via the realization of brain-machine-interface (BMI) devices based on SiC and diamond thin films. His group has demonstrated the biocompatibility of SiC and nanocrystalline diamond with neural cells and has demonstrated activation of action potentials using SiC-based neuronal activation devices.
August 2001 to July 2006 University of South Florida, Tampa, FL., Associate Professor, Electrical Engineering Department. Dr. Saddow's research focused on epitaxial layer growth on porous SiC, on Si for robust MEMS applications and on novel substrates for high-power electronic devices. He developed a hot-wall CVD growth capability and studied novel chemistries, mostly focused on halocarbon precursors, to both improve the material quality and reduce the growth temperature. He was a visiting professor at the Max-Planck Institute für Festkörperforschung (FKF), Grenzflächenanalytik (GA) group, where he studied SiC surfaces. He edited a book on SiC entitled Advances in Silicon Carbide Processing and Applications, Edited by S. E. Saddow and A. Agrawal, © 2004 Artech House ISBN 1-58053-740-5.
1997 to July 2001 Mississippi State University, Miss. State, MS., Assistant Professor & Director, Emerging Materials Research Laboratory (EMRL), Dept. of Electrical & Computer Engineering. Director of the Emerging Materials Research Laboratory (EMRL). Established a horizontal chemical vapor deposition (CVD) system for synthesizing advanced SiC thin films. Pioneered the growth of 3C-SiC on Si substrates using LEO and was the first to report Pendeo epitaxial growth of 3C-SiC on Si(001). Developed the first Si overpressure implant anneal (IA) process in the USA and demonstrated high temperature anneals of SiC implanted regions up to 1700°C.
July 1988 to Dec. 1996. Army Research Laboratory, Adelphi, MD., Senior Electronics Engineer, RF Effects and Hardening Technology Branch. Experimentally investigate semiconductor materials which may have high-payoff to the Army in the area of high-field and power electronics. Designed, fabricated and demonstrated a hybrid optoelectronic attenuator/limiter suitable for UWB electronics protection. Perform SiC electronic impurity experimental and theoretical studies to develop high-quality SiC epitaxial layers for advanced Army electronics systems.
Dec. 1994 - Dec. 1996. The University of Maryland, College Park, MD, Adjunct Research Associate, Dept of ECE. Member of Prof. Chi H. Lee’s Ultrafast Optoelectronics Research Laboratory . Develop advanced optoelectronics to support UWB technology R&D at ARL.
1983 to 1988 Armament R, D, & E Center, Picatinny Arsenal, NJ, Electronics Engineer, Precision Munitions Division. Developed millimeter-wave seeker technology for advanced fire and forget precision munitions. COTR on two SBIRs to develop 94 GHz hardware for seekers. Member Copperhead in-house quality assurance laboratory and FASCAM scatterable mine program.
1982 to 1983 Electronic Coils, Inc., Springfield, MA, Product Engineer (EE-4), Engineering Development Laboratory. Developed magnetic devices for power supply, aerospace and defense industries. Responsible for prototype design, fabrication and product improvements. Wrote production and Q/A procedures and specs. Developed novel swinging inductor design for switch-mode power supplies.
Workshops Taught and Conferences Organized
Materials Research Society (MRS) 2012 Spring Meeting, Symposium H: Silicon Carbide: Materials, Processing, and Devices, Boston MA, Symposium Chair.
Materials Research Society (MRS) 2010 Spring Meeting, Symposium B: Silicon Carbide: Materials, Processing, and Devices, Boston MA, Symposium Organizer
Silicon Carbide: Growth, Processing, Characterization, Theory and Devices, Organized by M. Capano, B. Hull, R. Stahlbush and S. E. Saddow, 2009 Electronic Materials Conference , Santa Barbara , CA Wednesday, June 25 through Friday, June 27, 2008.
International workshop on 3C-SiC hetero-epitaxy Hetero–SiC ’11, Tours, Fr, 27-29 June 2011.
International workshop on 3C-SiC hetero-epitaxy Hetero–SiC ’09, Catania, Sicily (IT), 6-7 May 2009.
Silicon Carbide: Growth, Processing, Characterization, Theory and Devices, Organized by M. Capano, R. Stahlbush and S. E. Saddow, 2008 Electronic Materials Conference , Santa Barbara , CA Wednesday, June 25 through Friday, June 27, 2008.
Silicon Carbide: Growth, Processing, Characterization, Theory and Devices, Organized by M. Capano, R. Stahlbush and S. E. Saddow, 2007 Electronic Materials Conference , Notre Dame, IN Wednesday, June 18 through Friday, June 20, 2007.
Materials Research Society (MRS) 2004 Spring Meeting, Symposium J: Silicon Carbide: Materials, Processing, and Devices, Boston MA, Symposium Organizer.
Materials Research Society (MRS) 2002 Fall Meeting, Symposium K: Silicon Carbide: Materials, Processing, and Devices, Boston MA, Symposium Chair.
Porous Semiconductors: Fabrication, Properties, and Applications , Organized by S. E. Saddow and R. M. Feenstra, 2002 Electronic Materials Conference , Santa Barbara , California, Wednesday, June 26 through Friday, June 28, 2002
ONR Workshop on Surface and Sub-surface Damage in Wide Band Gap Semiconductors , ONR Road Block Workshop, Kodiak, AK, August 2001.
Senior Member, IEEE : Florida West Coast Section
IEEE Microwave Theory & Techniques Society: Past Chair, ADCOM member (Wash. DC/N. VA Chapter)
IEEE EMBS (Engineering in Medicine and Biology)
Sigma Xi - The Scientific Research Society, Miss. State Univ. chapter (Vice President, 2000-2001)
Eta Kappa Nu - The Electrical Engineering Honor Society.
Visiting Research Positions
1. Visiting Researcher, IMEM-CNR, Parma and Trento, Italy (IT), June-July 2010
2. Visiting Professor, IMM-CNR, Catania, Sicily (IT), Sep 2007 - August 2008.
3. Visiting Professor, Max Planck Institute, Stuttgart, Germany, May-June 2004, 2005.
4. Visiting Professor, Institut d'Electronique Fondamentale Univ. Paris-Sud, June 2002.
5. Visiting Professor, Institut d'Electronique Fondamentale Univ. Paris-Sud, May 2001.
6. Visiting Scientist, Royal Institute of Technology , Kista, Sweden, August 1996.
8. Visiting Scientist, University of Erlangen-Nürnberg , Germany, 1994 (3 months).
Sailing, cycling, travel